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、aS等两个以上元素结合而成的ⅲ—ⅴ族；由ⅱ族的zn与ⅵ族的S、Se结合而成的ⅱ—ⅵ族；由Si与c结合而成的ⅳ—ⅳ族等化合物半导体，主要技术有单晶制作技术、外延技术、掺杂技术、元
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法,所有同步放电球也可以均装在封闭的绝缘筒内，并不断地提供过滤空气。球隙不易受环境变化的影响，放电稳定；可产生1.2/50μS等多种波形。2．电压等级和能量电压等级100kv―
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